Xm. Huang et al., RELATIONSHIP BETWEEN DIFFERENT INTERFACIAL PHASES AND OXYGEN SOLUBILITY IN SILICON MELT, JPN J A P 2, 33(6B), 1994, pp. 120000820-120000822
Different interfacial phases formed at the interface between undoped o
r Sb-doped Si melt and SiO2 were observed, and the relationship betwee
n the interfacial phases and oxygen solubility in the Si melts was inv
estigated. A foil-form interfacial phase with composition of about SiO
1.8 appeared between the bulk Si melt and SiO2 ampule wall when the Sb
concentration in the Si melt was less than 0.5 at%. However, the from
of the interfacial phase became dendritic and composition changed to
SiO2 when the Sb concentration was in the range from 0.5 to 2.0 at%. T
he interfacial phase disappeared when the Sb concentration reached abo
ut 2.0 at%. Corresponding to the different interfacial phases, the equ
ilibrium oxygen concentrations in the Si melt also changed considerabl
y, i.e., from 2 x 10(18) at/cm3 to about 2 x 10(19) at/cm3.