CATION SOURCE DEPENDENCE OF GA0.5IN0.5P GROWTH-RATE BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION

Authors
WU JW CHANG CY LIN KC CHAN SH CHEN HD CHEN PA CHANG EY KUO MS
Citation
Jw. Wu et al., CATION SOURCE DEPENDENCE OF GA0.5IN0.5P GROWTH-RATE BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION, JPN J A P 2, 33(6B), 1994, pp. 120000832-120000833
Citations number
14
Categorie Soggetti
Physics, Applied
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS → ACNP
Volume
33
Issue
6B
Year of publication
1994
Pages
120000832 - 120000833
Database
ISI
SICI code
Abstract
The Ga0.5In0.5P epilayer was grown by low-pressure metalorganic chemic al vapor deposition. Trimethylgallium and triethylgallium were used as the gallium source's, while trimethylindium and ethyldimethylindium w ere used as the indium sources. The use of triethylgallium incorporate d with trimethylindium enhanced the growth rate of Ga0.5In0.5P as comp ared to incorporation with ethyldimethylindium. While the use of trime thylgallium incorporated with ethyldimethylindium enhanced the growth rate of Ga0.5In0.5P significantly, as compared to incorporation with t rimethylindium.