INVESTIGATION OF SURFACE PASSIVATION EFFECT OF A-SINX-H ON A-SI-H BY PHOTOTHERMAL DEFLECTION SPECTROSCOPY

Authors
UMEZU I DAIGO M MEDA K
Citation
I. Umezu et al., INVESTIGATION OF SURFACE PASSIVATION EFFECT OF A-SINX-H ON A-SI-H BY PHOTOTHERMAL DEFLECTION SPECTROSCOPY, JPN J A P 2, 33(6B), 1994, pp. 120000873-120000875
Citations number
9
Categorie Soggetti
Physics, Applied
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS → ACNP
Volume
33
Issue
6B
Year of publication
1994
Pages
120000873 - 120000875
Database
ISI
SICI code
Abstract
Optical absorption of surface- and interface-states in a-Si:H and a-Si N(x):H (x=1.2 and 1.7) films was measured by photothermal deflection s pectroscopy. The surface-state absorption of a-Si:H was reduced by pas sivation of the a-SiN1.7:H or a-SiN1.2:H layer. The surface absorption s of a-SiN1.7:H and a-Si1.2:H are lower than that of a-Si:H. The origi n of free surface absorption of a-Si:H was discussed in terms of the n ative oxide layer.