K. Nomura et al., ORIENTED GROWTH OF CU(110) ON YSI2-X(1(1)OVER-BAR-00 SI(100) AND DIFFUSION BEHAVIOR IN COPPER SILICIDE FORMATION/, JPN J A P 2, 33(6B), 1994, pp. 120000880-120000883
The growth and diffusion characterization of Cu films on the YSi2-x(11
00BAR)/Si(100) substrate are studied. On the YSi2-x(1100BAR) layer pre
pared using a thin template layer, highly oriented Cu(110) film growth
is observed, and Cu diffusion through the YSi2-x layer and the subseq
uent Cu3Si formation occur at temperatures as low as 200-degrees-C. On
the contrary, the growth of Cu with normal orientation is evident on
the YSi2-x layer with poor epitaxial quality, and the out-diffusion of
Si forms a CU3Si layer on the YSi2-x layer. The film growth on YSi2-x
layers is discussed on the basis of the lattice match between superla
ttice cells of Cu and YSi2-x, and the diffusion behavior is interprete
d in terms of relaxation of the affinity of Cu for Si.