EFFICIENT FIELD-EFFECT IN HEAVILY-DOPED THIN-FILM DIAMOND METAL-INSULATOR-SEMICONDUCTOR DIODE EMPLOYING BATIO3 INSULATOR FILM

Metal-insulator-semiconductor (MIS) structures of heavily doped (6-7 x 10(18) cm-3) epitaxial diamond were prepared, which include highly po larizable BaTiO3 insulator films. They were characterized by capacitan ce-voltage (C-V) and electron-beam-induced-current (EBIC) measurements . Despite the presence of background boron of an extremely high concen tration, an applied voltage of at most 10 V was sufficient to establis h the deep-depletion condition at the diamond surface. The observed EB IC image gave a more direct indication of the efficient field effect i n our diamond MIS structures.