TEMPERATURE-DEPENDENT REACTION OF RF HYDROGEN PLASMA WITH SILICON

The reaction of rf hydrogen plasma with silicon has been studied by ch aracterizing the reaction products as a function of silicon target tem perature (80-300-degrees-C), hydrogen gas pressure (20-200 Pa) and rf power (50-400 W). It was found that the reaction rate of rf hydrogen p lasma with silicon increased at temperatures below 200-degrees-C. Majo r products in the reaction are SiH2 and SiH3 species, and their sputte ring rates depend strongly on the silicon target temperature rather th an plasma density under the present sputtering conditions. The tempera ture dependence can be explained in terms of the chemical reaction rat e of hydrogen with silicon and the surface density of adsorbed hydroge n on the silicon surface. The plasma bombardment effects on the reacti on rate and the desorption rate of adsorbed hydrogen are also discusse d.