HEAT-TREATMENT AND STEAMING EFFECTS OF SILICON-OXIDE UPON ELECTRON DISSIPATION ON SILICON-OXIDE SURFACE

We investigated heat treatment and steaming effects of silicon oxide u pon the surface dissipation of contact-electrified electrons. As a res ult, we found that the surface diffusion of densely contact-electrifie d electrons on the silicon oxide surface becomes. slower due to the re moval of the adsorbed water layer on a silicon oxide layer by means of heat treatment, while it is enhanced by the steamed water layer. From the heat treatment and steaming effects upon the dissipation process, we concluded that the stable state of densely contact-electrified ele ctrons becomes more stable upon removal of the water layer.