STRONGLY DRIVEN SEMICONDUCTOR QUANTUM-WELLS - NEW TESTING GROUND FOR QUANTUM CHAOS

Authors
HOLTHAUS M
Citation
M. Holthaus, STRONGLY DRIVEN SEMICONDUCTOR QUANTUM-WELLS - NEW TESTING GROUND FOR QUANTUM CHAOS, Progress of theoretical physics. Supplement, (116), 1994, pp. 417-423
Citations number
12
Categorie Soggetti
Physics
Journal title
Progress of theoretical physics. Supplement → ACNP
ISSN journal
03759687
Issue
116
Year of publication
1994
Pages
417 - 423
Database
ISI
SICI code
0375-9687(1994):116<417:SDSQ-N>2.0.ZU;2-Q
Abstract
The influence of resonances in a classical Hamiltonian system on its q uantum mechanical counterpart is particularly transparent in periodica lly driven systems with one degree of freedom. Wide semiconductor quan tum wells, subjected to strong far-infrared laser radiation, may be su itable objects to study the classical-quantum correspondence experimen tally.