44-GHZ HIGH-EFFICIENCY INP-HEMT MMIC POWER-AMPLIFIER

Authors
LAM W MATLOUBIAN M IGAWA A CHOU C KURDOGHLIAN A NGO C JELLOIAN L BROWN A THOMPSON M LARSON L
Citation
W. Lam et al., 44-GHZ HIGH-EFFICIENCY INP-HEMT MMIC POWER-AMPLIFIER, IEEE microwave and guided wave letters, 4(8), 1994, pp. 277-278
Citations number
NO
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
IEEE microwave and guided wave letters → ACNP
ISSN journal
10518207
Volume
4
Issue
8
Year of publication
1994
Pages
277 - 278
Database
ISI
SICI code
1051-8207(1994)4:8<277:4HIMP>2.0.ZU;2-E
Abstract
A high-efficiency power amplifier was developed using 0.15-mum gatelen gth, InP-based (GaInAs/AlInAs/InP), HEMT MMIC technology. The amplifie r demonstrated state-of-the-art performance. The output power at 1-dB compression point was 28 dBm at 44.5 GHz. The corresponding power-adde d efficiency was 31% and gain was 7 dB. The total chip area was 2.5 mm 2.