GROWTH AND FERROELECTRIC PROPERTIES OF STRONTIUM BISMUTH TANTALITE THIN-FILMS USING PULSED-LASER DEPOSITION COMBINED WITH AN ANNEALING PROCESS

Ferroelectric strontium bismuth tantalite (SBT) thin films were fabric ated on Pt/Ti/SiO2/Si substrates using pulsed laser deposition combine d with an annealing process. The crystallization and ferroelectric pro perties were clearly dependent on the annealing conditions. SBT thin f ilms with good crystallization and ferroelectric properties were obtai ned after annealing at 700 degrees C for 90 min. The films showed high (115) and (008) diffraction peaks, Good ferroelectric properties were obtained from the films; remnant polarization and coercive field were about 10 mu C cm(-2) and 57 kV cm(-1), respectively. No fatigue was o bserved up to 10(10) switching cycles. The dc leakage current was abou t 4 x 10(-8) A cm(-2) and the dc breakdown field was 250 kV cm(-1).