ACHIEVING BROAD-AREA LASER-DIODES WITH HIGH-OUTPUT POWER AND SINGLE-LOBED FAR-FIELD PATTERNS IN THE LATERAL DIRECTION BY LOADING A MODAL REFLECTOR
Citation
K. Shigihara et al., ACHIEVING BROAD-AREA LASER-DIODES WITH HIGH-OUTPUT POWER AND SINGLE-LOBED FAR-FIELD PATTERNS IN THE LATERAL DIRECTION BY LOADING A MODAL REFLECTOR, IEEE journal of quantum electronics, 30(8), 1994, pp. 1683-1690
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
SICI code
0018-9197(1994)30:8<1683:ABLWHP>2.0.ZU;2-M
Abstract
A modal reflector, which consists of a high-reflectivity region surrou
nded by low-reflectivity regions, is added to the front facet of two t
ypes of broad-area laser diodes (LD's) to control the lateral modes. O
ne type of LD is the self-aligned laser with a bent active layer (SBA
LD) that has a real index-guiding mechanism. The other is a planar-str
ipe LD that consists of a Zn-diffused region to confine the current fl
ow and has a gain-guiding mechanism. For the SBA LD's with a modal ref
lector, stable single-lobed far-field patterns (FFP's) are obtained at
up to 03 and 0.4 W output powers in continuous wave (CW) operation an
d pulsed operation, respectively. In addition, for planar-stripe LD's
with a modal reflector, stable single-lobed FFP's are obtained at up t
o 0.4 W in CW operation. The lateral modes inside the cavity are analy
zed by utilizing a slit model and FFP's are calculated. Good agreement
is found between experimental and calculated FFP's for a large Fresne
l number.