MICROWAVE-SPECTRA IN EXTERNAL-CAVITY SEMICONDUCTOR-LASERS - THEORETICAL MODELING OF MULTIPASS RESONANCES

Authors
BESNARD P MEZIANE B AITAMEUR K STEPHAN G
Citation
P. Besnard et al., MICROWAVE-SPECTRA IN EXTERNAL-CAVITY SEMICONDUCTOR-LASERS - THEORETICAL MODELING OF MULTIPASS RESONANCES, IEEE journal of quantum electronics, 30(8), 1994, pp. 1713-1722
Citations number
22
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
IEEE journal of quantum electronics → ACNP
ISSN journal
00189197
Volume
30
Issue
8
Year of publication
1994
Pages
1713 - 1722
Database
ISI
SICI code
0018-9197(1994)30:8<1713:MIES-T>2.0.ZU;2-Y
Abstract
We show theoretically that the behavior of an external-cavity semicond uctor laser depends on the microscopic intensity distribution of the f eedback light. Adapted rate equations are developed based on the trave ling-wave model. This model successfully predicts the double-peaked st ructure of the external-cavity resonance (centered around c/2L) and mu ltiple-pass resonances when the system is misaligned.