AN INVESTIGATION OF THE AR-ENHANCED REACTION OF CCL4 ON SI(100) BY SECONDARY-ION MASS-SPECTROSCOPY( ION)

Authors
WEE ATS HUAN CHA TAN KL TAN RSK
Citation
Ats. Wee et al., AN INVESTIGATION OF THE AR-ENHANCED REACTION OF CCL4 ON SI(100) BY SECONDARY-ION MASS-SPECTROSCOPY( ION), Journal of Materials Science, 29(15), 1994, pp. 4037-4042
Citations number
16
Categorie Soggetti
Material Science
Journal title
Journal of Materials Science → ACNP
ISSN journal
00222461
Volume
29
Issue
15
Year of publication
1994
Pages
4037 - 4042
Database
ISI
SICI code
0022-2461(1994)29:15<4037:AIOTAR>2.0.ZU;2-M
Abstract
The Ar+ ion-enhanced reaction of carbon tetrachloride (CCl4) on Si (10 0) at room temperature is investigated at primary ion energies of 2 an d 9 keV using the secondary ion mass spectrometry (SIMS) technique. St atic SIMS shows that CCl4 reacts with Si at room temperature. This sur face reaction is enhanced by simultaneous sputtering with an Ar+ ion b eam, the reaction rate being higher at 9 keV than at 2 keV. Possible p roducts of surface reaction are discussed.