RECONSTRUCTION CONTROLLED DOPANT INCORPORATION AND COERCION EFFECTS IN MOLECULAR-BEAM EPITAXIAL GERMANIUM GROWN ON GALLIUM-ARSENIDE

Authors
WOOD CEC TABATABAEI SA MIMOMYE LV GROBER LM
Citation
Cec. Wood et al., RECONSTRUCTION CONTROLLED DOPANT INCORPORATION AND COERCION EFFECTS IN MOLECULAR-BEAM EPITAXIAL GERMANIUM GROWN ON GALLIUM-ARSENIDE, Journal of applied physics, 76(4), 1994, pp. 2197-2201
Citations number
14
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
76
Issue
4
Year of publication
1994
Pages
2197 - 2201
Database
ISI
SICI code
0021-8979(1994)76:4<2197:RCDIAC>2.0.ZU;2-N
Abstract
Incorporation of arsenic in molecular-beam epitaxial germanium depends upon the specific surface reconstruction. When both gallium and arsen ic are incident on the surface during growth, incorporation of both sp ecies follow each other in magnitude and temperature dependence. This similarity of incorporation behavior is explained by ''coercion'' effe cts related to chemisorbed arsenic-induced surface charge separation.