The conductivity, Hall coefficient, and thermopower of Hg1-xCdxTe (MCT
) are calculated for 0<x<0.3 at temperatures below 400 K and donor dop
ing lower than 10(19) CM-3 . The results are obtained by solving the B
oltzmann equation with the iteration method, including scattering of t
he carriers by ionized impurities, optical and acoustic phonons, and a
lloy potential. The agreement between the calculation and a large amou
nt of compiled experimental data is excellent for bulk samples and thi
ck films grown by molecular-beam epitaxy. Using tabulated data for the
thermal conductivity the thermoelectric figure of merit Z is calculat
ed, and in the most favorable conditions of doping and composition ZT
is less than 0.33 at T=300 K. The potential for increasing the ZT of M
CT is discussed.