FEMTOSECOND RELAXATION OF MINORITY ELECTRONS IN HEAVILY CARBON-DOPED GAAS

Authors
DAVIDSON A COMPTON RC WISE F MARS D MILLER J
Citation
A. Davidson et al., FEMTOSECOND RELAXATION OF MINORITY ELECTRONS IN HEAVILY CARBON-DOPED GAAS, Journal of applied physics, 76(4), 1994, pp. 2255-2259
Citations number
17
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
76
Issue
4
Year of publication
1994
Pages
2255 - 2259
Database
ISI
SICI code
0021-8979(1994)76:4<2255:FROMEI>2.0.ZU;2-W
Abstract
Relaxation of minority electrons in carbon-doped GaAs with hole concen trations as high as 6 X 10(19) cm-3 is measured with femtosecond optic al techniques. The relaxation of photoexcited electrons depends strong ly on the doping level above 10(19) CM-3 . The dependence of the trans ient absorption and reflectivity on the hole concentration indicates t hat electrons relax rapidly by electron-hole scattering into low-energ y states which are available as a result of band-gap renormalization a nd band tailing.