Y. Zohta et T. Tanamoto, VALLEY CURRENT OF 3-DIMENSIONAL RESONANT-TUNNELING DIODE STUDIED BY THE IMPROVED OPTICAL-MODEL, Journal of applied physics, 76(4), 1994, pp. 2343-2346
Using the energy-dependent optical potential determined by experimenta
l data on hot electrons, the optical model is improved to incorporate
the effect of longitudinal optical-phonon scattering that is important
in GaAs/AlGaAs systems. On the basis of this model, simulations have
been made of double-barrier resonant tunneling diodes with emitters of
high and low donor concentrations. The simulation results are in good
agreement with experimental results, i.e., the improved optical model
explains the experimental peak-to-valley ratio well in the case with
the high donor concentration emitter, and reproduces a phonon satellit
e observed in the experiment in the case with the low donor concentrat
ion emitter. It is shown that this simulator is easy to use and simple
to interpret, and can be easily obtained by a little modification of
the widely used one-dimensional simulator.