VALLEY CURRENT OF 3-DIMENSIONAL RESONANT-TUNNELING DIODE STUDIED BY THE IMPROVED OPTICAL-MODEL

Using the energy-dependent optical potential determined by experimenta l data on hot electrons, the optical model is improved to incorporate the effect of longitudinal optical-phonon scattering that is important in GaAs/AlGaAs systems. On the basis of this model, simulations have been made of double-barrier resonant tunneling diodes with emitters of high and low donor concentrations. The simulation results are in good agreement with experimental results, i.e., the improved optical model explains the experimental peak-to-valley ratio well in the case with the high donor concentration emitter, and reproduces a phonon satellit e observed in the experiment in the case with the low donor concentrat ion emitter. It is shown that this simulator is easy to use and simple to interpret, and can be easily obtained by a little modification of the widely used one-dimensional simulator.