The structure, magnetic properties and magnetoresistance of Co/Cu mult
ilayer films grown by sputtering on Si (100) wafers, with Co layer thi
cknesses between 1.9 nm and 2.0 nm and Cu layer thicknesses between 0.
5 nm and 1.3 nm, have been studied. X-ray diffraction, transmission el
ectron microscopy, and optical diffractogram analysis show layered str
uctures and a columnar face-centred-cubic (111) crystallographic textu
re extending through several layers in the films. The magnetic domain
structure was studied by Lorentz microscopy, and the domain structure
and image contrast were found to depend strongly on the Cu layer thick
ness and magnetoresistance. Hysteresis curves explain the trends of ma
gnetic domain contrast and magnetic coupling in the films. Annealed sa
mples show a more regular domain structure, and lower saturating field
and magnetoresistance than as-sputtered samples.