J. Hilliard et al., INFRARED-SPECTROSCOPY AND SECONDARY-ION MASS-SPECTROMETRY OF LUMINESCENT, NONLUMINESCENT, AND METAL QUENCHED POROUS SILICON, Journal of applied physics, 76(4), 1994, pp. 2423-2428
Porous silicon with varying optical properties (luminescent, nonlumine
scent, and metal quenched) is investigated by transmission infrared (I
R) spectroscopy and secondary ion mass spectrometry (SIMS). SIMS and t
ransmission IR data are presented which show a lack of correlation bet
ween the optical properties of similarly prepared luminescent and nonl
uminescent porous silicon samples and the concentrations of the chemic
al elements and bonds detected therein. Similar results are obtained f
or a comparison of IR spectra before and after dissolving the topmost
layers (approximately 2000 angstrom) of a luminescent sample in a KOH
solution, exposing the nonluminescent porous material below. Finally,
IR and SIMS results for luminescent porous silicon quenched by metal i
on solutions show a large increase in oxygen after quenching, but it i
s argued that the increased oxygen is unlikely to be directly responsi
ble for the quenching of luminescence.