Ab. Catalan et al., PREPARATION OF BARIUM STRONTIUM-TITANATE THIN-FILM CAPACITORS ON SILICON BY METALLORGANIC DECOMPOSITION, Journal of applied physics, 76(4), 1994, pp. 2541-2543
Barium strontium titanate films were deposited on 100-mm-diam silicon
wafers by metallorganic decomposition. Highly uniform films ranging up
to 250 nm in thickness were obtained. Scanning electron beam microgra
phs revealed dense, crack-free, low porosity films having grain sizes
in the submicron range. Dissipations (tan delta) of less than 0.01 and
capacitance densities up to 204 nF/c m2 were measured for 190-nm-thic
k films. These films had dc leakage currents of 0.2 muA/cm2 or less fo
r bias voltages up to 10 V. They also exhibited relatively small tempe
rature coefficients of capacitance. A patterning process was developed
that permitted feature resolution down to 5 mum.