TRANSPORT PROPERTY OF SI SI1-XGEX SI P-TYPE MODULATION-DOPED DOUBLE-HETEROSTRUCTURE

High mobility Si/Si1-xGex/Si p-type modulation-doped double heterostru ctures with Ge fractions of 0.2, 0.25, 0.3 have been grown by rapid th ermal process/very low pressure-chemical vapor deposition. Hole Hall m obilities as high as approximately 300 cm2/V s (at 293 K and sheet car rier concentration of approximately 2.6 x 10(13) cm-2) and approximate ly 8400 cm2/V s (at 77 K and sheet carrier concentration of approximat ely 1.2 x 10(13) cm-2) have been obtained for heterostructures with x= 0.3. The variation of hole mobility with temperature and the influence of the Ge fraction on hole mobility were investigated.