HYSTERESIS IN THE SWITCHING OF HOT-ELECTRONS IN INP INGAAS DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS/

Authors
MCALISTER SP MCKINNON WR ABID Z GUZZO EE
Citation
Sp. Mcalister et al., HYSTERESIS IN THE SWITCHING OF HOT-ELECTRONS IN INP INGAAS DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS/, Journal of applied physics, 76(4), 1994, pp. 2559-2561
Citations number
12
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
76
Issue
4
Year of publication
1994
Pages
2559 - 2561
Database
ISI
SICI code
0021-8979(1994)76:4<2559:HITSOH>2.0.ZU;2-K
Abstract
The switching behavior of a composite-collector InP/InGaAs heterojunct ion bipolar transistor is found to be hysteretic at temperatures below 200 K. This arises from the underlying S-shaped negative differential conductivity associated with the hot-electron transport of electrons across the heterojunction barrier in the collector structure of such t ransistors.