Jw. Klaus et al., ATOMIC LAYER CONTROLLED GROWTH OF SIO2-FILMS USING BINARY REACTION SEQUENCE CHEMISTRY, Applied physics letters, 70(9), 1997, pp. 1092-1094
SiO2 thin films were deposited with atomic layer control using binary
reaction sequence chemistry. The SiO2 growth was accomplished by separ
ating the binary reaction SiCl4+2H(2)O-->SiO2+4HCl into two half-react
ions. Successive application of the half-reactions in an ABAB... seque
nce produced SiO2 deposition at temperatures between 600 and 800 K and
reactant pressures of I-LO Torr. The SiO2 growth was monitored using
ellipsometry versus substrate temperature and reactant exposure time.
The maximum SiO2 deposition per AB cycle was 1.1 Angstrom/AB cycle at
600 K. The surface topography measured using atomic force microscopy w
as extremely flat with a roughness nearly identical to the initial sub
strate. (C) 1997 American Institute of Physics.