REFLECTION ANISOTROPY SPECTROSCOPY STUDY OF THE NEAR-SURFACE ELECTRIC-FIELD IN LOW-TEMPERATURE-GROWN GAAS(001)

Authors
HOLDEN T POLLAK FH FREEOUF JL MCINTURFF D GRAY JL LUNDSTROM M WOODALL JM
Citation
T. Holden et al., REFLECTION ANISOTROPY SPECTROSCOPY STUDY OF THE NEAR-SURFACE ELECTRIC-FIELD IN LOW-TEMPERATURE-GROWN GAAS(001), Applied physics letters, 70(9), 1997, pp. 1107-1109
Citations number
23
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
70
Issue
9
Year of publication
1997
Pages
1107 - 1109
Database
ISI
SICI code
0003-6951(1997)70:9<1107:RASSOT>2.0.ZU;2-I
Abstract
We have evaluated an ''effective depletion width'' of less than or equ al to 45 Angstrom and the sign (n-type/upward band bending) of the nea r surface electric field in low-temperature grown GaAs (001) using the optical method of reflection anisotropy spectroscopy in the vicinity of the spin-orbit split E(1), E(1) + Delta(1) optical features. Our re sults provide evidence that surface Fermi level pinning occurs for air exposed (001) surfaces of undoped low temperature grown GaAs. (C) 199 7 American Institute of Physics.