T. Holden et al., REFLECTION ANISOTROPY SPECTROSCOPY STUDY OF THE NEAR-SURFACE ELECTRIC-FIELD IN LOW-TEMPERATURE-GROWN GAAS(001), Applied physics letters, 70(9), 1997, pp. 1107-1109
We have evaluated an ''effective depletion width'' of less than or equ
al to 45 Angstrom and the sign (n-type/upward band bending) of the nea
r surface electric field in low-temperature grown GaAs (001) using the
optical method of reflection anisotropy spectroscopy in the vicinity
of the spin-orbit split E(1), E(1) + Delta(1) optical features. Our re
sults provide evidence that surface Fermi level pinning occurs for air
exposed (001) surfaces of undoped low temperature grown GaAs. (C) 199
7 American Institute of Physics.