RESONANT-CAVITY ENHANCED GAINASSB PHOTODETECTORS GROWN BY MBE FOR ROOM-TEMPERATURE OPERATION AT 2.35 MU-M

Authors
SHI Y ZHAO JH LEE H SARATHY J COHEN M OLSEN G
Citation
Y. Shi et al., RESONANT-CAVITY ENHANCED GAINASSB PHOTODETECTORS GROWN BY MBE FOR ROOM-TEMPERATURE OPERATION AT 2.35 MU-M, Electronics Letters, 32(24), 1996, pp. 2268-2269
Citations number
7
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
32
Issue
24
Year of publication
1996
Pages
2268 - 2269
Database
ISI
SICI code
0013-5194(1996)32:24<2268:REGPGB>2.0.ZU;2-G
Abstract
Resonant cavity enhanced photodetectors based on GaInAsSb have been su ccessfully fabricated and characterised to operate at a resonant wavel ength of 2.35 mu m at room temperature. The photodetectors show a maxi mum quantum efficiency of eta = 63%, a peak responsivity of R = 1.21 A /W and a detectivity D of 5.84 x 10(9) cmHz(1/2)W(-1) at -0.5V bias a t the resonant wavelength.