LOW-THRESHOLD LASER-DIODES BASED ON TYPE-II GAINASSB GASB QUANTUM-WELLS OPERATING AT 2.36 MU-M AT ROOM-TEMPERATURE/

Authors
BARANOV AN CUMINAL Y BOISSIER G ALIBERT C JOULLIE A
Citation
An. Baranov et al., LOW-THRESHOLD LASER-DIODES BASED ON TYPE-II GAINASSB GASB QUANTUM-WELLS OPERATING AT 2.36 MU-M AT ROOM-TEMPERATURE/, Electronics Letters, 32(24), 1996, pp. 2279-2280
Citations number
10
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
32
Issue
24
Year of publication
1996
Pages
2279 - 2280
Database
ISI
SICI code
0013-5194(1996)32:24<2279:LLBOTG>2.0.ZU;2-E
Abstract
Laser diodes emitting at 2.36 mu m at room temperature have been fabri cated from a type-II quantum-well heterostructure with an active regio n consisting of five Ga0.65In0.35As0.15Sb0.85 wells and GaSb barriers. A pulsed threshold current density of 305 A/cm(2) has been obtained f or an 820 mu m-long-device at 23 degrees C. The characteristic tempera ture T-0 was found to be 55K between -30 and 50 degrees C, the differe ntial quantum efficiency being 35% for 600 mu m long lasers.