MEASUREMENT OF BUILT-IN ELECTRIC-FIELD IN BASE OF SI GEXSI1-X/SI HBT WITH LINEARLY-GRADED GE PROFILE/

Authors
NEUGROSCHEL A SAH CT
Citation
A. Neugroschel et Ct. Sah, MEASUREMENT OF BUILT-IN ELECTRIC-FIELD IN BASE OF SI GEXSI1-X/SI HBT WITH LINEARLY-GRADED GE PROFILE/, Electronics Letters, 32(24), 1996, pp. 2280-2282
Citations number
15
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
32
Issue
24
Year of publication
1996
Pages
2280 - 2282
Database
ISI
SICI code
0013-5194(1996)32:24<2280:MOBEIB>2.0.ZU;2-T
Abstract
An experimental method is presented for the direct measurement of the built-in electric field in Si/GeNSi1-x/Si heterojunction bipolar trans istors (HBT) with a linearly-graded Ge profile. The method is based on a comparison of the DC and AC characteristics of Si/GexSi1-x/Si HBTs and reference Si bipolar transistors with the same geometry and doping profiles. The built-in field is determined independently of the densi ty of states, minority-carrier mobility, and heavy-doping effects.