PULSED-LASER DEPOSITION OF TANTALUM OXIDE THIN-FILMS

High quality Ta2O5 films have been deposited on Si substrate by 532 nm pulsed laser deposition at O-2 gas environment. X-ray diffraction mea surement shows that the as-deposited films are amorphous. and a phase transformation to polycrystalline of beta-Ta2O5 takes place after anne aling the film at 800 degrees C for 30 min. Physical and electrical me asurements reveal that the polycrystalline Ta2O5 films have good prope rties: refractive indices similar to 2.15, dielectric constants simila r to 35, and leakage currents < 5 X 10(-9) A/cm(2) at an applied elect ric field of 100 kV/cm.