T. Machida et al., CURRENT-INDUCED DECOUPLING OF EDGE STATES IN THE INTEGER QUANTUM HALL-EFFECT, Physical review. B, Condensed matter, 54(20), 1996, pp. 14261-14264
A Hall resistance in AlxGa1-xAs/GaAs heterostructure devices shows mar
kedly asymmetric nonlinear behavior in the presence of nonequilbrium p
opulation between edge channels. The nonlinear characteristics vary su
bstantially with increasing temperature from 20 mK up to 1 K, suggesti
ng that the energy dispersion of the edge state is stepwise at low tem
peratures, but smears with increasing temperature.