ON THE DANGLING-BOND RELAXATION PROBLEM IN HYDROGENATED AMORPHOUS-SILICON

Authors
KAZANSKII AG MAO Y KONG GL
Citation
Ag. Kazanskii et al., ON THE DANGLING-BOND RELAXATION PROBLEM IN HYDROGENATED AMORPHOUS-SILICON, Solid state communications, 91(6), 1994, pp. 447-449
Citations number
10
Categorie Soggetti
Physics, Condensed Matter
Journal title
Solid state communications → ACNP
ISSN journal
00381098
Volume
91
Issue
6
Year of publication
1994
Pages
447 - 449
Database
ISI
SICI code
0038-1098(1994)91:6<447:OTDRPI>2.0.ZU;2-H
Abstract
The influence of pulsed bias light excitation on the absorption in the defect region of undoped a-Si:H film has been investigated. Ac consta nt photocurrent method has been used to measure the absorption spectru m. The absorption in the defect region increases with the light pulse duration.The analysis of obtained results does not support the existen ce of a long time relaxation process of dangling-bond states in a-Si:H .