FEMTOSECOND LUMINESCENCE MEASUREMENTS OF THE INTERSUBBAND SCATTERING RATE IN ALXGA1-XAS GAAS QUANTUM-WELLS UNDER SELECTIVE EXCITATION/

Citation
M. Hartig et al., FEMTOSECOND LUMINESCENCE MEASUREMENTS OF THE INTERSUBBAND SCATTERING RATE IN ALXGA1-XAS GAAS QUANTUM-WELLS UNDER SELECTIVE EXCITATION/, Physical review. B, Condensed matter, 54(20), 1996, pp. 14269-14272
Citations number
23
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
01631829
Volume
54
Issue
20
Year of publication
1996
Pages
14269 - 14272
Database
ISI
SICI code
0163-1829(1996)54:20<14269:FLMOTI>2.0.ZU;2-V
Abstract
We have investigated the intersubband scattering of electrons in GaAs quantum wells using luminescence up-conversion with 100-fs resolution. The decay time of the n=2 electron-to-heavy-hole transition (e,hh)(2) depends both on the excess energy of the charge carriers and on the e xcitation density. A Monte Carlo simulation allows us to reproduce the experimental data with high accuracy. The intrinsic LO-phonon scatter ing rate is found to be 2.0x10(12) s(-1) for 80-meV subband separation . We show the wave-vector dependence and explain the density and exces s energy dependence.