DIELECTRIC-MATRIX CALCULATION OF THE VOLUME-PLASMON DISPERSION-RELATION FOR SILICON

Citation
Aj. Forsyth et al., DIELECTRIC-MATRIX CALCULATION OF THE VOLUME-PLASMON DISPERSION-RELATION FOR SILICON, Physical review. B, Condensed matter, 54(20), 1996, pp. 14355-14361
Citations number
25
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
01631829
Volume
54
Issue
20
Year of publication
1996
Pages
14355 - 14361
Database
ISI
SICI code
0163-1829(1996)54:20<14355:DCOTVD>2.0.ZU;2-P
Abstract
Plasmon-band splitting in silicon has been the subject of theoretical interest recently, since reports of its experimental observation using coherent inelastic x-ray scattering. The theoretical plasmon-dispersi on relation can be obtained from dielectric-response theory and knowle dge of the electronic structure of the solid. In this work the frequen cy- and wave-vector-dependent dielectric matrix (DM) has been calculat ed in the random-phase approximation, with a nonlocal empirical pseudo potential (EPM) electronic band structure. We present results for the volume-plasmon dispersion relation along high-symmetry directions in t he first Brillouin zone. Contrary to previous local EPM-based DM calcu lations, this nonlocal EPM band structure results in excellent agreeme nt with the experimental plasmon-dispersion anisotropy. In addition, t hese dispersion results are in better agreement with experiment than p revious local-density-approximation calculations. Evidence for a weak approximate to 2-eV band gap is found at the L point. Unlike previous calculations, the presence of two plasmon resonances is directly obser vable from the calculated loss function in the Lambda direction.