ELECTRICAL-RESISTANCE OF NBSE3 SINGLE-CRY STALS UNDER UNIAXIAL PRESSURE

The temperature dependences of the electrical resistance of the quasi- one-dimensional NbSe3 single crystals under uniaxial pressure, which w as applied perpendicular to the high conductivity axis of the crystal, has been studied experimentally. Pressure growth leads to the increas e both of the superconducting transition onset and of the CDW-transiti on (near 59 K) temperature. It is shown that the both effects are in a good agreement with the concept of the Peierls gap suppression under uniaxial pressure.