INTERNAL-STRESS IN THIN-FILMS PREPARED BY ION-BEAM AND VAPOR-DEPOSITION

The effect of ion beam irradiation on the internal stress in thin film s prepared by ion beam and vapor deposition (IVD) was studied. The thi n films were prepared by the evaporation of nickel or silicon metals a nd simultaneous irradiation on Si(100) substrates by argon ion beams. The energies of the argon ions were changed in the range 0.5-10.0 keV, while the transport ratio of vapor atoms to ions was changed from 5 t o 15. The internal stresses in the thin films were measured by the dis placements of the substrates after deposition, and the results show th at the internal stress changed from compressive to tensile with increa sing ion beam energy. In addition, the control of the internal stresse s in multilayer films prepared by IVD was investigated. It was found t hat it is possible to control the internal stress in a multilayer film by a suitable combination of the layers.