METAL-ION IMPLANTATION SYSTEM WITH 3 BEAMS

An advanced metal ion implantation system for studying surface modific ation of materials by metal ion implantation has been developed, and i s equipped with three metal vapor vaccum arc (MEVVA) IIA-H ion sources . All three ion sources are mounted horizontally on a large target cha mber 600 mm high and 800 mm in diameter. The MEVVA IIA-H source operat es in a pulsed mode, with a pulse width of 1.2 ms and a repetition rat e of up to 50 Hz. A large variety of ion species have been extracted a t voltage of 30-80 kV, including the metal, compound and alloy ions. T he time-averaged beam current is 10 mA or more for most ion species me ntioned above. The target chamber is evacuated by two mechanical vacuu m pumps and two molecular pumps. The base pressure in the system is 4 x 10(-4) pa. The implantation chamber has a hinged door, 500 mm high a nd 400 mm wide, used to insert the components to be treated. Two viewi ng ports 100 mm in diameter are provided on each side of the chamber. Two kinds of target holder can be used in the target chamber for impla nting components of different shapes.