Ds. Kim et al., PERCOLATION OF CARRIERS THROUGH LOW POTENTIAL CHANNELS IN THICK ALXGA1-XAS (X-LESS-THAN-0.35) BARRIERS, Physical review. B, Condensed matter, 54(20), 1996, pp. 14580-14588
We study by photoluminescence excitation the heretofore unsolved puzzl
e of a significant charge transfer over a thick (100 to 1500 Angstrom)
AlxGa1-xAs barrier in GaAs/AlxGa1-xAs asymmetric double quantum wells
, which the normally considered tunneling cannot account for. This phe
nomenon is completely general, observed in all the samples grown under
standard growth conditions (similar to 600 degrees C), that originate
d from many different sources. The existence of such leakage is also c
onfirmed by time-resolved photoluminescence experiments. However, when
the alloy barrier is replaced by an equivalent GaAs/AlAs digital allo
y, or by AlAs, the leak largely disappears. In addition, a GaAs barrie
r separating two shallow InxGa1-xAs quantum wells permits only relativ
ely small transfer. The leak has a weak dependence on the barrier thic
kness at x=0.3, but is a very strong function of x around x=0.3. We ar
gue that there is no way to explain all of the observed phenomena simu
ltaneously other than by the existence of intrinsic structural inhomog
eneities in the alloy. Essentially, there may exist low potential chan
nels in the alloy barrier created by microscopic clustering of like mo
lecules, through which percolationlike transport occurs. This picture
is supported by a three-dimensional quantum-mechanical model calculati
on. Our work pins down the dynamical implications of the partial order
ing and clustering in AlxGa1-xAs and related semiconductor ternary all
oys. The scope of this paper is exclusively for the transport over thi
ck AlxGa1-xAs barriers (x<0.35) and does not include the relatively sm
all but still non-negligible transport over thick homogeneous barriers
such as GaAs, AlAs, and AlAs/GaAs digital alloys, and AlxGa1-xAs (x>0
.35). We contend that transport over these thick, homogeneous barriers
may be owing to other mechanisms such as dipole-dipole transfer, phot
on reabsorption, nonequilibrium distribution of carriers, and polarito
n transport that are also unrelated to conventional tunneling.