Hs. Wang et al., INTERACTION BETWEEN THE PLASMA THE THE WORKPIECE SURFACE IN THE PROCESS OF PLASMA SOURCE ION-IMPLANTATION, Surface & coatings technology, 66(1-3), 1994, pp. 525-528
Plasma source ion implantation (PSII) is a method that allows ion impl
antation of all surfaces at normal incidence. The workpiece to be trea
ted is placed directly in the plasma and is successively pulse biased
to a high negative voltage in a given duty cycle in the PSII device. W
hen the workpiece is not biased, the plasma behaviour around the workp
iece is calculated using the numerical solution of the plasma-sheath e
quations, established by means of ambipolar diffusion physics processe
s. When the workpiece is biased to a high negative voltage, a simplifi
ed energy profile model of the ions accelerated toward the workpiece i
s proposed, and the sheath-edge propagation as a function of time is a
lso calculated. The calculation and analysis in this paper clearly exp
lain the effective mechanisms on the workpiece surface caused by the p
lasma, and provide a foundation for the investigation of PSII physics
processes.