Diamond was deposited by the microwave plasma chemical vapor depositio
n method on a Si(100) substrate on which graphite flakes had been spre
ad with their basal planes parallel to the substrate before deposition
. Before diamond deposition, the substrate was preheated at 1200-degre
es-C under hydrogen at 60 Torr to clean the surface of graphite flakes
. Scanning electron micrographs showed that most of diamond particles
were cubo-octahedral in morphology. The {111} planes of some diamond p
articles, which were judged by their triangular shape, were often para
llel to the (0001) plane of graphite. Furthermore, some [111]-oriented
diamond particles were clearly nucleated at the edge of graphite. The
possibility of heteroepitaxy of diamond on graphite was discussed bas
ed on crystallographic considerations.