NANOSTRUCTURE AND CHEMISTRY OF A (100)MGO (100)GAAS INTERFACE/

Authors
BRULEY J STEMMER S ERNST F RUHLE M HSU WY RAJ R
Citation
J. Bruley et al., NANOSTRUCTURE AND CHEMISTRY OF A (100)MGO (100)GAAS INTERFACE/, Applied physics letters, 65(5), 1994, pp. 564-566
Citations number
9
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
65
Issue
5
Year of publication
1994
Pages
564 - 566
Database
ISI
SICI code
0003-6951(1994)65:5<564:NACOA(>2.0.ZU;2-O
Abstract
High-resolution transmission electron microscopy (TEM) shows that MgO films, grown on (001) GaAs by magnetron sputtering, are single crystal with a cube-on-cube relationship with the substrate, even though they are separated from the substrate by an amorphous interlayer. Scanning TEM-energy dispersive x-ray and scanning TEM-electron energy loss spe ctroscopy analysis of the interlayer shows that it consists of the nat ive oxide of GaAs as well as nanocrystalline MgO. It is proposed that epitaxial MgO nucleated at pin holes produced by volatilization of the native oxide.