STRAINED INAS INP QUANTUM-WELL HETEROSTRUCTURE LASERS GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION/

This letter reports the successful operation at room temperature of a separate confinement heterostructure InAs/InGaAs/InP strained-layer mu ltiple quantum well laser grown by low-pressure metalorganic chemical vapor deposition. The threshold current density was as low as 250 A/cm 2 for a 600X200 mum broad area laser device. The characteristic temper ature T0 was found to be 190 K between 100 and 130 K, and 147 K betwee n 130 and 300 K. The lasing wavelength was 1.7 mum at room temperature .