INFLUENCE OF BARRIER HEIGHT DISTRIBUTION ON THE PARAMETERS OF SCHOTTKY DIODES

I-V curves of Schottky diodes are simulated for a Gaussian type of the Schottky barrier height (SBH) distribution using the model of noninte racting parallel diodes. The mean value and the standard deviation of the distribution are supposed to be constant, i.e., not dependent on t he voltage and the temperature. The influence of the distribution para meters and the temperature on the apparent barrier height and the idea lity factor is analyzed. It is shown that the ideality factor increase s and the apparent barrier height decreases with increasing standard d eviation and decreasing temperature. The simulation also provides a ro ugh estimate for the standard deviation. Values of approximately 0.09 V can result in ideality factors up to 1.2. The importance of the effe ct of series resistance in the approach of noninteracting diodes is em phasized.