DEEP LEVELS IN 6H-SIC WAFERS AND STEP-CONTROLLED EPITAXIAL LAYERS

Authors
JANG S KIMOTO T MATSUNAMI H
Citation
S. Jang et al., DEEP LEVELS IN 6H-SIC WAFERS AND STEP-CONTROLLED EPITAXIAL LAYERS, Applied physics letters, 65(5), 1994, pp. 581-583
Citations number
20
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
65
Issue
5
Year of publication
1994
Pages
581 - 583
Database
ISI
SICI code
0003-6951(1994)65:5<581:DLI6WA>2.0.ZU;2-S
Abstract
We have investigated deep levels in 6H-SiC wafers grown by a modified Lely method and step-controlled epitaxial layers by transient capacita nce methods. Several deep electron traps, Of which concentrations were on the order of 10(15) CM-3, located at 0.39-0.69 eV below the conduc tion band edge were observed in the 6H-SiC wafers. However, the epitax ial layers by step-controlled epitaxy had very few traps of which conc entrations were below the detection limit (< 10(13) Cm-3).