MONTE-CARLO FORMULATION OF VELOCITY-FIELD CHARACTERISTICS AND EXPRESSIONS FOR ALXGA1-XAS

Steady-state velocity-field characteristics in AlxGa1-xAs are calculat ed for a wide range of composition, doping, and temperature variations , using Monte Carlo techniques. The results are related to the scatter ing mechanisms which are responsible for the observed transport parame ters. A single empirical expression is formulated to fit all the Monte Carlo data. This expression incorporates all the nonlinear transport effects and would be useful for numerical simulation of device models. A general methodology is also presented for formulating such expressi ons, and the results are applicable to modelling field-dependent mobil ity in AlxGa1-xAs devices.