A REVIEW OF RECENT WORK ON STRESSES AND STRAINS IN SEMICONDUCTOR HETEROSTRUCTURES

We first discuss the work on strain and critical thickness of large ar ea lattice mismatched epilayers of GeSi, InGaAs and II-VI semiconducto rs. A summary of Finite Element (FE) calculations of stresses in strip e-substrate heterostructures is then given. Calculated stresses for no vel stripe designs are also given. The results are then applied to int erpret experiments. Raman and luminescence experiments on stripes of G aAs/Si GeSi/Si and InGaAs/GaAs, Raman experiments on LOGOS structures and on GeSi quantum wires and quantum dots and luminescence experiment s on InGaAs quantum wires are included in the discussion.