UNIFIED NOISE MOSFET MODELING

Citation
B. Iniguez et Eg. Moreno, UNIFIED NOISE MOSFET MODELING, Physica scripta. T, T69, 1997, pp. 174-176
Citations number
8
Categorie Soggetti
Physics
Journal title
ISSN journal
02811847
Volume
T69
Year of publication
1997
Pages
174 - 176
Database
ISI
SICI code
0281-1847(1997)T69:<174:UNMM>2.0.ZU;2-W
Abstract
In this paper we present unified models for the main noise contributio ns of the MOSFET drain current spectral density: the flicker noise and the thermal noise. The new noise model is consistent with a unified d rain current model. All equations present an infinite order of continu ity through all operating regimes. This makes the model very useful to study the noise in analog circuits, especially in low-power applicati ons.