SI-BASED RECEIVERS FOR OPTICAL-DATA LINKS

We present results for GexSi1-x waveguide pin detectors grown by rapid thermal chemical vapor deposition (RTCVD). Detectors with multiple Ge .29Si.71 absorption layers show an internal quantum efficiency of 33% at lambda = 1.3 mum with a dark current of 27 pA/mum2. The external qu antum efficiency is limited to 7% by the fiber-to-waveguide coupling e fficiency. The output eye diagram for a hybrid lambda = 1.3 mum silico n receiver at 500 Mb/s is demonstrated. Prospects of a silicon-based o ptoelectronic receiver array technology are discussed.