CMOS MAGNETIC-FIELD SENSOR SYSTEM

A magnetic-field sensor system integrated in CMOS technology with addi tional processing steps necessary for sensor fabrication is presented. The system contains a magnetoresistive permalloy microbridge acting a s a sensor, temperature compensation circuitry, programmable readout e lectronics, reference voltage bias, and clock generation. It features maximum magnetic flux sensitivity of 70 mV/muT (corresponds to the mag netic-field sensitivity of 88.2 mV/(A/m) @ mu(r) = 1) and its temperat ure gain is below 260 ppm/-degrees-C in the range between -50-degrees- C and +100-degrees-C.