Monolithic system integration of optical components, photodetectors, a
nd analog transimpedance CMOS amplifiers is presented. An advanced SWA
MI LOCOS technique, based on a submicron CMOS process is applied. Diff
erent optical devices including waveguides, beam splitters, interferom
eters and mirrors have been integrated using this technique. The optic
al system consists of a SiON layer deposited on 2-mum oxide. The waveg
uides are made of structured SiO2 layers on top of the SiON layer. Lea
ky wave or butt coupled photodiodes and phototransistors are used as l
ight detectors. The photocurrents are amplified by low-noise CMOS tran
simpedance amplifiers with high sensitivity. They were designed for a
large dynamic range of photocurrents together with short recovery time
s and low noise. Their reliability and yield were optimized with new C
AD tools.