K. Tarnay et al., EXAMINATION OF MOS STRUCTURES BY A 3D PARTICLE DYNAMICS MONTE-CARLO SIMULATOR INCLUDING ELECTROTHERMAL EFFECTS, Physica scripta. T, T69, 1997, pp. 290-294
The MicroMOS quasi-deterministic particle dynamics 3D Monte-Carlo prog
ram for submicron MOS transistors is now extended with electron-phonon
interaction models for intervalley scattering and with a carrier-latt
ice energy exchange model. The impact ionisation and Auger recombinati
on models are also improved. The carrier transport and lattice heat tr
ansport problems are self-consistently solved. As example the results
of simulation, the spatial distribution of electrons, electron-phonon
scattering events, impact ionisation events, Auger recombination event
s and the lattice temperature are presented. A new, low drain-to-sourc
e voltage breakdown effect has been observed.