EXAMINATION OF MOS STRUCTURES BY A 3D PARTICLE DYNAMICS MONTE-CARLO SIMULATOR INCLUDING ELECTROTHERMAL EFFECTS

The MicroMOS quasi-deterministic particle dynamics 3D Monte-Carlo prog ram for submicron MOS transistors is now extended with electron-phonon interaction models for intervalley scattering and with a carrier-latt ice energy exchange model. The impact ionisation and Auger recombinati on models are also improved. The carrier transport and lattice heat tr ansport problems are self-consistently solved. As example the results of simulation, the spatial distribution of electrons, electron-phonon scattering events, impact ionisation events, Auger recombination event s and the lattice temperature are presented. A new, low drain-to-sourc e voltage breakdown effect has been observed.