RF-MU-SR STUDY OF MUONIUM CHARGE STATES AND DYNAMICS IN SI

The radio frequency muSR technique developed at TRIUMF was used to mea sure the temperature dependence of the diamagnetic muon, Mu, and Mu a mplitudes in silicon between 10 K and 500 K. Six samples doped with ph osphorus (n-type) and boron (p-type) in the concentration range 10(11) to 10(15) cm-3 were studied. In pure Si a very good fit over the whol e temperature range is obtained from a model that includes the ionizat ion of Mu a,nd Mu to a bond centered mu+ followed at high temperature by charge exchange involving Mu.